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Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

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, , Citation V Donchev et al 2010 J. Phys.: Conf. Ser. 210 012041 DOI 10.1088/1742-6596/210/1/012041

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1 Faculty of Physics, Sofia University, 5, blvd. J. Bourchier, Sofia-1164, Bulgaria

2 Institut de Ciència dels Materials, University de València, PO Box 22085E-46071, València, Spain

3 Department of Physics, University of Ottawa, Ottawa ON, K1N 6N5, Canada

4 Instituto de Microélectronica de Madrid (CNM- CSIC), Isaac Newton 8, Tres Cantos, 28760, Madrid, Spain

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1742-6596/210/1/012041

Abstract

The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

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10.1088/1742-6596/210/1/012041